| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The IRF540S is an N-Channel power MOSFET manufactured by Infineon Technologies. It utilizes metal-oxide semiconductor technology and is designed for switching and amplification applications. The device is rated for a drain-to-source voltage of 100V and a continuous drain current of 28A at 25°C. Maximum on-resistance is 77mΩ at 17A drain current with a 10V gate drive, which supports efficient power conversion.
The MOSFET features a maximum gate threshold voltage of 4V and a total gate charge of 72nC. These characteristics allow the device to be driven by standard gate-driver circuits with moderate switching losses. The surface-mount TO-263 (D2PAK) package is suitable for automated assembly and heat dissipation in compact PCB layouts.
Typical applications include switch-mode power supplies, DC-DC converters, motor control circuits, and high-current power switching. The combination of 100V voltage capability and 28A current handling makes it a versatile component for industrial and automotive power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRF540S has a drain-to-source voltage rating of 100V.
The IRF540S is offered in a TO-263 (D2PAK) surface-mount package.
The continuous drain current at 25°C case temperature is 28A.
The maximum on-resistance is 77mΩ at 17A drain current and 10V gate drive.
The maximum gate threshold voltage is 4V at a drain current of 250µA.
The total gate charge is 72nC (maximum).
The IRF540S is an N-channel MOSFET.