| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,657 pcs
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7657 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Tape & Reel |
The Infineon IRF540NSTRLPBF is a high-performance N-channel MOSFET designed for various power switching applications. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 33A, making it suitable for demanding tasks.
This MOSFET utilizes Infineon's Hexfet® technology, offering low on-resistance of 44 mΩ at 16A and 10V, and a gate threshold voltage of 4V at 250uA. The device has a power dissipation of 3.8W.
Packaged in a TO-263 surface mount case, the IRF540NSTRLPBF is designed for efficient thermal management and ease of integration into printed circuit boards. Its unipolar construction and N-channel enhancement mode make it a versatile component for power electronics designs.
Key electrical characteristics include a gate-source voltage rating of 20V. The device is specified as RoHS3 compliant and has an MSL 1 rating, indicating unlimited moisture sensitivity.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 100V.
The continuous drain current is 33A.
The on-resistance is 44 mΩ at 16A and 10V.
It is in a TO-263 surface mount package.
The RoHS status is RoHS3 Compliant.
The MSL is Level 1.