IRF540NSTRLPBF N-Channel power MOSFET with 100V drain-source voltage and 33A continuous drain current. Features ultra-low on-resistance of 44mΩ and is housed in a surface-mount D2PAK package.
Mfr Part #:

IRF540NSTRLPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET with 100V drain-source voltage and 33A continuous drain current. Features ultra-low on-resistance of 44mΩ and is housed in a surface-mount D2PAK package.
✓ Total Stock: 476 pcs
$ Price Range: $0.87 - $2.89

IRF540NSTRLPBF Available from 1 distributor

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IRF540NSTRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF540NSTRLPBF Description

Short technical summary and product information.

The IRF540NSTRLPBF is an N-channel power MOSFET from Infineon Technologies, originally developed by International Rectifier as part of the HEXFET family. It utilizes advanced process technology to achieve ultra-low on-resistance and fast switching performance.

 

Key electrical specifications include a drain-source breakdown voltage of 100V, continuous drain current of 33A at 25°C case temperature, and a maximum on-resistance of 44mΩ at Vgs=10V and Id=16A. The gate threshold voltage ranges from 2.0V to 4.0V. Maximum power dissipation is 130W at 25°C case temperature, and the operating junction temperature range is -55°C to +175°C.

 

The device is fully avalanche rated with a repetitive avalanche energy of 13mJ and a peak diode recovery dv/dt of 7.0V/ns. Gate charge is 71nC at 10V, and input capacitance is 1960pF at Vds=25V. These characteristics make it suitable for high-efficiency switching applications.

 

The IRF540NSTRLPBF is offered in a D2PAK (TO-263) surface-mount package, which provides low internal connection resistance and good thermal performance. The package can dissipate up to 2.0W in typical surface mount applications. The part is lead-free and RoHS compliant (unverified).

IRF540NSTRLPBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRF540NSTRLPBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRF540NSTRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF540NSTRLPBF Estimated Pricing

Qty Low High
1+ $2.89 $2.89
10+ $1.87 $1.87
50+ $1.42 $1.42
100+ $1.28 $1.28
800+ $0.98 $0.98
2,400+ $0.87 $0.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF540NSTRLPBF Features

  • 100V drain-source breakdown voltage rating.
  • 33A continuous drain current capability.
  • Ultra-low 44mΩ on-resistance at 10V gate drive.
  • Surface-mount D2PAK package for high power.
  • Fully avalanche rated for rugged operation.

IRF540NSTRLPBF Applications

  • Used in high-efficiency DC-DC converters.
  • Ideal for motor control and drive circuits.
  • Suitable for power supply switching stages.
  • Applied in automotive and industrial systems.

IRF540NSTRLPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What is the continuous drain current?

33A at case temperature 25°C.

What is the on-resistance?

44mΩ maximum at Vgs=10V, Id=16A.

What is the operating temperature range?

-55°C to +175°C junction temperature.

What package is this MOSFET available in?

D2PAK (TO-263) surface-mount package.

Is this device RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

2.0V to 4.0V.

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