| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
IRF540NSPBF is an N-Channel power MOSFET from Infineon Technologies, built with advanced HEXFET process technology. It supports a drain-to-source voltage of 100V and a continuous drain current of 33A at 25°C case temperature (23A at 100°C). The device features a maximum on-resistance of 44mΩ at VGS=10V and ID=16A, enabling efficient high-current switching with low conduction losses.
The MOSFET is fully avalanche rated with an avalanche current of 16A and repetitive avalanche energy of 13mJ. It offers a gate charge of 71nC at VGS=10V and input capacitance of 1960pF at VDS=25V, supporting fast switching behavior. Maximum power dissipation is 130W at 25°C case temperature, with a linear derating factor of 0.87W/°C.
The device operates over a junction temperature range of -55°C to +175°C and is available in the TO-263-3 D2PAK surface-mount package. This package provides low internal connection resistance and is suitable for high-current surface-mount applications. The part is lead-free and RoHS compliant.
100V.
33A at Tc=25°C, and 23A at Tc=100°C.
44mΩ maximum at ID=16A and VGS=10V.
-55°C to +175°C (junction).
2.0V to 4.0V at VDS=VGS and ID=250µA.
TO-263-3 D2PAK (2 leads + tab, TO-263AB), surface mount.
Yes, it is marked RoHS3 Compliant, and it is lead-free.