| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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561 pcs
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561 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF540N is an N-channel power MOSFET designed for high-power switching applications. It offers a maximum drain-source voltage of 100V and a maximum continuous drain current of 33A, making it suitable for demanding applications in automotive, industrial, and consumer electronics sectors.
Key specifications include a low on-resistance of 0.077Ω at 10V gate-source voltage and 33A drain current, contributing to efficient operation and minimized power losses. Its fast switching speeds are enabled by its MOSFET construction, allowing for precise control in applications like power inverters and motor drives.
Packaged in a TO-220 case, the IRF540N provides excellent thermal dissipation and easy integration into various electronic circuits. It operates reliably across a wide temperature range from -55°C to +175°C, ensuring durability in harsh environments. Its robust construction further enhances its suitability for industrial and automotive applications requiring high current handling and voltage capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the IRF540N is 100V.
The IRF540N can handle a maximum continuous drain current (Id) of 33A.
The on-resistance (Rds(on)) of the IRF540N is typically 0.077Ω at a gate-source voltage of 10V and a drain current of 33A.
The IRF540N transistor operates within a temperature range of -55°C to +175°C.
The IRF540N is available in a TO-220 package.