| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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155 pcs
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155 pcs | On Request | 1 | On Request | On Request | 1037 | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF540A is an N-Channel power MOSFET designed for high-efficiency switching applications. It features a drain-source breakdown voltage of 100V and a continuous drain current of 28A at 25°C case temperature, with a maximum on-state resistance of 52 mΩ at 10V gate drive.
This device incorporates avalanche rugged technology and rugged gate oxide, enabling reliable operation under harsh conditions. It offers low input capacitance (1710 pF typical) and optimized gate charge (78 nC typical) for fast switching performance. The MOSFET can handle pulsed drain currents up to 110A and single-pulse avalanche energy up to 523 mJ.
The IRF540A is packaged in a standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks. It operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 107W at 25°C case temperature. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
The drain-source breakdown voltage is 100V minimum.
The IRF540A is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
The IRF540A is listed as RoHS3 compliant, but this has not been independently verified.
The continuous drain current is 28A at 25°C case temperature, and 19.8A at 100°C.
The maximum drain-source on-state resistance is 52 mΩ at VGS=10V and ID=14A.