IRF540A N-Channel power MOSFET with 100V drain-source breakdown voltage and 28A continuous drain current. Housed in a TO-220-3 through-hole package.
Mfr Part #:

IRF540A

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET with 100V drain-source breakdown voltage and 28A continuous drain current. Housed in a TO-220-3 through-hole package.
✓ Total Stock: 10,155 pcs

IRF540A Available from 2 distributors

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✓ Non-Authorised
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10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
155 pcs
155 pcs On Request 1 On Request On Request 1037 On Request On Request

IRF540A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Fall Time (Typ)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Rise Time (Typ)
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF540A Description

Short technical summary and product information.

The IRF540A is an N-Channel power MOSFET designed for high-efficiency switching applications. It features a drain-source breakdown voltage of 100V and a continuous drain current of 28A at 25°C case temperature, with a maximum on-state resistance of 52 mΩ at 10V gate drive.

 

This device incorporates avalanche rugged technology and rugged gate oxide, enabling reliable operation under harsh conditions. It offers low input capacitance (1710 pF typical) and optimized gate charge (78 nC typical) for fast switching performance. The MOSFET can handle pulsed drain currents up to 110A and single-pulse avalanche energy up to 523 mJ.

 

The IRF540A is packaged in a standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks. It operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 107W at 25°C case temperature. The device is RoHS3 compliant and has an MSL of 1 (unlimited).

IRF540A Quick Information

Product Type: MOSFET
Canonical Name: IRF540A N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IRF540A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF540A Features

  • 100V drain-source breakdown voltage.
  • 28A continuous drain current at 25°C.
  • Low on-resistance of 52 mΩ maximum.
  • Avalanche rated for 523 mJ single pulse.
  • Operating temperature range -55°C to 175°C.

IRF540A Applications

  • Used in DC-DC converter circuits.
  • Ideal for motor control applications.
  • Suitable for power supply switching stages.
  • Applicable in battery management systems.

IRF540A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF540A?

The drain-source breakdown voltage is 100V minimum.

What package does the IRF540A come in?

The IRF540A is available in a TO-220-3 through-hole package.

What is the operating temperature range of the IRF540A?

The operating junction temperature range is -55°C to 175°C.

Is the IRF540A RoHS compliant?

The IRF540A is listed as RoHS3 compliant, but this has not been independently verified.

What is the maximum drain current?

The continuous drain current is 28A at 25°C case temperature, and 19.8A at 100°C.

What is the on-resistance of the IRF540A?

The maximum drain-source on-state resistance is 52 mΩ at VGS=10V and ID=14A.

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