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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The IRF540 is a widely utilized N-channel enhancement MOSFET known for its adaptability and efficiency in high-current conditions. Manufactured by Intersil, this component is housed in a TO-220AB package, which is favored for its low thermal resistance and suitability for power dissipation levels up to 150W.
Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current rating of 28A at 25°C case temperature. The on-resistance (RDS(on)) is a low 0.077Ω when the gate-source voltage is 10V, contributing to energy efficiency by minimizing power loss and heat generation. It also features a gate charge (Qg) of 72nC (max).
The IRF540 operates across a wide temperature range from -55°C to 175°C, ensuring consistent performance under challenging environmental conditions. Its dynamic dV/dt rating and repetitive avalanche capabilities enhance its ruggedness and reliability in demanding applications. The TO-220AB package is suitable for through-hole mounting.
This MOSFET is a versatile component found in numerous electronic designs, including power supplies, motor control systems, and audio amplifiers, where its combination of speed, ruggedness, and cost-effectiveness is highly valued.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRF540 is 100V.
The continuous drain current is 28A at 25°C case temperature and 20A at 100°C case temperature.
The typical on-resistance (RDS(on)) is 0.077Ω at a gate-source voltage of 10V.
The IRF540 operates from -55°C to +175°C.
The IRF540 is available in the TO-220AB package.