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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF540 is a third-generation N-channel Power MOSFET manufactured by Vishay Siliconix. It is designed to offer a combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. This MOSFET is housed in a TO-220AB package, which is widely used in commercial-industrial applications for power dissipation levels up to approximately 50 W.
Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current of 28A at 25°C. The on-resistance (RDS(on)) is typically 0.077Ω at a gate-source voltage of 10V. It also features a maximum power dissipation of 150W at 25°C and a gate charge of 72nC (max).
The IRF540 is suitable for various applications due to its performance characteristics. Its features like dynamic dV/dt rating, repetitive avalanche rating, and a wide operating temperature range from -55°C to 175°C make it a robust choice for demanding environments. The TO-220AB package offers low thermal resistance, contributing to its wide acceptance in the industry.
This MOSFET is compliant with RoHS Directive 2002/95/EC. Its simple drive requirements and ease of paralleling further enhance its utility in circuit design.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRF540 is 100 V.
The IRF540 has a continuous drain current of 28 A at 25°C and 20 A at 100°C.
The typical on-resistance of the IRF540 is 0.077 Ω at a gate-source voltage of 10 V.
The IRF540 operates between -55°C and 175°C.
The IRF540 is available in the TO-220AB package.
The IRF540 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF540 is 1 Unlimited.