| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF540 is a widely utilized N-channel enhancement MOSFET known for its adaptability and efficiency in high-current conditions. It is housed in a TO-220AB package, which is suitable for power dissipation levels up to 150W.
Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current of 28A at 25°C (VGS = 10V). The typical on-resistance (RDS(on)) is 0.077Ω at VGS = 10V. It also offers a pulsed drain current of up to 110A and a maximum power dissipation of 150W.
This MOSFET is designed for fast switching and simple drive requirements, making it suitable for various applications. Its operating junction temperature range is from -55°C to +175°C. The device is compliant with RoHS3 directives.
The TO-220AB package is a standard choice for commercial-industrial applications, offering good thermal performance. The IRF540's robust design and performance characteristics make it a versatile component in electronic designs.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRF540 is 100 V.
The continuous drain current of the IRF540 at 25°C (VGS = 10V) is 28 A.
The typical on-resistance (RDS(on)) for the IRF540 at VGS = 10V is 0.077 Ω.
The operating junction temperature range for the IRF540 is -55 to +175 °C.
The IRF540 is available in the TO-220AB package.
Yes, the IRF540 is RoHS3 Compliant.