| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Siliconix IRF540 is a HEXFET N-Channel MOSFET designed for power switching applications. It features a drain-to-source voltage (Vds) of 100V and a continuous drain current (Id) of 33A at 25°C.
This MOSFET has a maximum power dissipation of 130W and an operating temperature range of -55°C to 175°C. Key electrical characteristics include a gate charge (Qg) of 71 nC at 10V and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The on-resistance (Rds On) is a maximum of 44mOhm at 16A and 10V.
Packaged in a surface-mount TO-263-3, D²Pak (TO-263AB) configuration, the IRF540 is suitable for various electronic designs requiring efficient power control. Its N-channel metal-oxide semiconductor technology ensures reliable performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) of the IRF540 MOSFET is 100V.
The continuous drain current (Id) for the IRF540 at 25°C is 33A.
The maximum power dissipation of the IRF540 is 130W at the case temperature (Tc).
The IRF540 operates within a temperature range of -55°C to 175°C (TJ).
The IRF540 is an N-Channel MOSFET.
The IRF540 is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
The IRF540 MOSFET is surface mounted.