| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) |
The Infineon IRF540 is a high-performance N-Channel HEXFET MOSFET designed for various power switching applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 33A at 25°C, making it suitable for demanding tasks.
This MOSFET offers a low on-resistance (Rds On) of 44mOhm at 16A and 10V gate drive voltage, contributing to efficient power transfer. Key electrical characteristics include an input capacitance (Ciss) of 1960pF and a gate charge (Qg) of 71nC, both measured under specified conditions.
The operating temperature range for the IRF540 is from -55°C to 175°C, providing robustness in various environments. It is housed in a TO-263-3, D²Pak (TO-263AB) surface mount package, facilitating integration into compact PCB designs. The standard package quantity is 800 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
33A at 25°C case temperature.
44mOhm maximum at 16A drain current and 10V gate-source voltage.
-55°C to 175°C junction temperature.
TO-263-3 (D²Pak) surface-mount package.
4V maximum at 250µA drain current.
130W at case temperature.