| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,702 pcs
|
2702 pcs | On Request | 1 | On Request | On Request | 0601+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Failure Rate | |
| Gate Charge | |
| Input Capacitance | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present | |
| Supplier Device Package | |
| Technology |
The Infineon Technologies IRF540NSTRLPBF is a high-performance N-Channel MOSFET from the HEXFET series. It features a Drain-to-Source Voltage (Vds) of 100V and a continuous Drain Current (Id) of 33A at 25°C. The MOSFET has a low On-Resistance (Rds On) of 44mOhm at 16A and 10V gate drive, making it efficient for power switching applications.
Designed for surface mounting, the IRF540NSTRLPBF comes in a TO-263-3, D²Pak package. Its operating temperature range is -55°C to 175°C, and it has a maximum power dissipation of 130W. Key electrical parameters include an input capacitance (Ciss) of 1960pF at 25V and a gate charge (Qg) of 71nC at 10V.
This MOSFET is suitable for various power management tasks, including DC-DC converters, motor control, and power supply circuits. Its robust construction and reliable performance make it a solid choice for demanding applications.
The maximum drain-to-source voltage (Vdss) is 100V.
The continuous drain current is 33A at 25°C case temperature.
The maximum on-resistance is 44mOhm at Vgs=10V and Id=16A.
The operating junction temperature range is -55°C to 175°C.
The IRF540 is available in a surface-mount D2PAK package (TO-263-3).
The maximum gate threshold voltage is 4V at Id=250µA.
The maximum power dissipation is 130W at case temperature.