| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,524 pcs
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2524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
54 pcs
|
54 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF540 is an N-Channel enhancement-mode power MOSFET designed for high efficiency power switching applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 28A at 25°C case temperature. The device offers a low on-resistance of 77 mOhm at 10V gate drive, enabling reduced conduction losses. With a gate charge of 72 nC and fast switching characteristics, it is suitable for moderate frequency operation. The MOSFET can dissipate up to 150W of power and operates over a junction temperature range of -55°C to 175°C. It is built with third-generation MOSFET technology for ruggedness and ease of paralleling. The part is housed in a standard TO-220AB through-hole package, which is widely used in commercial and industrial power circuits. Typical applications include switch-mode power supplies, DC-DC converters, motor control drivers, and general purpose power switching.
The maximum drain-source voltage (VDS) is 100V.
The IRF540 is available in TO-220-3 package (TO-220AB).
The junction temperature range is -55°C to 175°C.
According to the datasheet, the base IRF540 with lead terminations is not RoHS compliant. Only parts with PbF suffix (e.g., IRF540PbF) are RoHS compliant.
The maximum gate threshold voltage is 4V at Id=250µA.
Continuous drain current is 28A at Tc=25°C and 20A at Tc=100°C. Pulsed drain current is 110A.
The maximum drain-source on-resistance is 77 mOhm at Id=17A and Vgs=10V.