IRF530SPBF IRF530SPBF is an N-Channel power MOSFET with 100V drain-source voltage and 14A continuous drain current. It features a low on-resistance of 160mOhm and is housed in a surface-mount D2PAK (TO-263) package.
Mfr Part #:

IRF530SPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRF530SPBF is an N-Channel power MOSFET with 100V drain-source voltage and 14A continuous drain current. It features a low on-resistance of 160mOhm and is housed in a surface-mount D2PAK (TO-263) package.
✓ Total Stock: 5,000 pcs
$ Price Range: $0.93 - $2.63

IRF530SPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request

IRF530SPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF530SPBF Description

Short technical summary and product information.

The IRF530SPBF is an N-Channel power MOSFET designed for high-efficiency switching applications. It offers a drain-source voltage rating of 100V and a continuous drain current of 14A at 25°C case temperature, with a maximum on-resistance of 160mOhm at 10V gate drive. The device features a gate threshold voltage of 4V and a maximum gate charge of 26nC, enabling fast switching performance.

 

This MOSFET is suitable for applications requiring high current handling and low conduction losses. It is packaged in a surface-mount D2PAK (TO-263) case, which provides excellent thermal performance with a maximum power dissipation of 88W at 25°C case temperature. The operating junction temperature range is -55°C to 175°C, ensuring reliability in demanding environments.

 

The IRF530SPBF is part of Vishay's third-generation power MOSFET family, offering ruggedized design and repetitive avalanche capability. It is available in tape and reel packaging for automated assembly.

IRF530SPBF Quick Information

Product Type: Power MOSFET
Series: IRF530S
Canonical Name: IRF530SPBF N-Channel Power MOSFET
Subcategory: Single MOSFET

IRF530SPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF530SPBF Estimated Pricing

Qty Low High
1+ $2.63 $2.63
10+ $1.69 $1.69
50+ $1.29 $1.29
100+ $1.16 $1.16
500+ $0.93 $0.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF530SPBF Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current of 14A at 25°C.
  • Low on-resistance of 160mOhm at 10V gate drive.
  • Surface-mount D2PAK (TO-263) package.
  • Operating junction temperature up to 175°C.

IRF530SPBF Applications

  • Power supply switching circuits.
  • DC-DC converter applications.
  • Motor control and drive circuits.
  • High-current load switching.

IRF530SPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF530SPBF?

The maximum drain-source voltage (Vds) is 100V.

What is the continuous drain current rating?

The continuous drain current is 14A at 25°C case temperature, and 10A at 100°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 160mOhm at a drain current of 8.4A and gate-source voltage of 10V.

What package does the IRF530SPBF come in?

It is available in a surface-mount D2PAK (TO-263) package, specifically TO-263-3, D2Pak (2 Leads + Tab), TO-263AB.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IRF530SPBF RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

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