| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
99 pcs
|
99 pcs | On Request | 1 | On Request | On Request | 929E | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF530S is a third-generation N-Channel Power MOSFET from Vishay Siliconix, designed for high efficiency and fast switching. It features a maximum drain-source voltage of 100V and continuous drain current of 14A at 25°C case temperature. The device offers a low on-resistance of 160mOhm at Vgs=10V and Id=8.4A, minimizing conduction losses. With a gate charge of 26nC, it enables efficient gate drive. The MOSFET is rated for repetitive avalanche energy up to 8.8mJ and single pulse avalanche energy of 69mJ, providing ruggedness in inductive switching applications. The operating junction temperature range is -55°C to 175°C. The device is housed in a surface-mount D2PAK (TO-263) package, suitable for high current applications due to low internal connection resistance. It is available in tape and reel packaging for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.68 | $1.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum.
Surface-mount D2PAK (TO-263) package.
-55°C to 175°C junction temperature.
14A at Tc=25°C, 10A at Tc=100°C.
Maximum 4V at Id=250µA.
160mOhm maximum at Vgs=10V, Id=8.4A.
Yes, single pulse avalanche energy 69mJ, repetitive 8.8mJ.