IRF530NPBF The Infineon IRF530NPBF is an N-channel HEXFET Power MOSFET designed for efficient and reliable applications. It features a 100V breakdown voltage and 17A continuous drain current.
Mfr Part #:

IRF530NPBF

Available from 4 distributors
Mfr Name: Infineon
Infineon
The Infineon IRF530NPBF is an N-channel HEXFET Power MOSFET designed for efficient and reliable applications. It features a 100V breakdown voltage and 17A continuous drain current.
✓ Total Stock: 67,437 pcs
$ Price Range: $1.26

IRF530NPBF Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
50,170 pcs
50170 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
13,060 pcs
13060 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,800 pcs
2800 pcs On Request 1 On Request On Request 23+ On Request On Request
Non-Authorised Inventory information
1,407 pcs
1407 pcs On Request 1 On Request On Request On Request On Request On Request

IRF530NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Medical Grade
Military Grade
Power Dissipation
Reverse Recovery Time
Storage Temperature
Tape & Reel

IRF530NPBF Description

Short technical summary and product information.

The Infineon IRF530NPBF is an N-channel HEXFET Power MOSFET utilizing advanced processing techniques for low on-resistance and fast switching speeds. It is housed in a TO-220AB package, which is widely used in commercial-industrial applications due to its low thermal resistance and cost-effectiveness.

 

Key electrical characteristics include a Drain-to-Source Breakdown Voltage of 100V and a Continuous Drain Current of 17A at 25°C with a Gate-to-Source Voltage of 10V. The typical On-Resistance is 90mΩ under similar conditions. The device operates over a wide temperature range from -55°C to +175°C.

 

This MOSFET is designed for efficiency and reliability, making it suitable for a variety of applications. Its ruggedized design and fully avalanche rated capabilities contribute to its robustness in demanding environments. The TO-220 package is preferred for power dissipation levels up to approximately 50 watts.

IRF530NPBF Quick Information

Product Type: MOSFET
Canonical Name: Infineon IRF530NPBF N-channel HEXFET Power MOSFET
Subcategory: N-Channel

IRF530NPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF530NPBF Estimated Pricing

Qty Low High
1+ $1.26 $1.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF530NPBF Features

  • 100V Drain-to-Source Breakdown Voltage
  • 17A Continuous Drain Current
  • 90mΩ Typical On-Resistance
  • TO-220AB Package
  • Lead-Free

IRF530NPBF Applications

  • Suitable for power conversion circuits
  • Used in industrial applications
  • Efficient switching applications
  • General purpose power switching

IRF530NPBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the IRF530NPBF?

The maximum continuous drain current is 17A at 25°C with a gate-to-source voltage of 10V.

What is the breakdown voltage of the IRF530NPBF?

The Drain-to-Source Breakdown Voltage is a minimum of 100V.

What is the typical on-resistance of the IRF530NPBF?

The typical on-resistance is 90mΩ.

What package type is the IRF530NPBF supplied in?

The IRF530NPBF is supplied in a TO-220AB package.

What is the operating temperature range for the IRF530NPBF?

The operating junction and storage temperature range is -55 to +175 °C.

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