| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation |
The IRF530N from Infineon Technologies is an N-Channel Power MOSFET designed for various electronic applications. It offers a drain-to-source voltage (V_DSS) of 100V and a continuous drain current (I_D) of 22A at 25°C case temperature.
Key electrical characteristics include an ultra-low on-resistance (R_DS(on)) of 0.064 Ohm when V_GS is 10V. The device supports a gate-to-source voltage range of ±20V. It has a maximum power dissipation of 85W and a power dissipation derating of 0.57 W/°C above 25°C.
This MOSFET operates within a temperature range of -55°C to 175°C. It is supplied in the JEDEC TO-220AB package, suitable for through-hole mounting. The maximum soldering temperature for the leads is 300°C for 10 seconds.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 100V minimum.
The IRF530N is available in a TO-220AB through-hole package.
The junction operating temperature range is -55°C to 175°C.
The continuous drain current is 22A at 25°C case temperature and 15A at 100°C.
The typical on-resistance is 0.064 Ohm at V_GS = 10V.
The maximum power dissipation is 85W at 25°C case temperature, derated at 0.57 W/°C above 25°C.