| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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138 pcs
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138 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation |
The Infineon IRF530N is an N-channel Power MOSFET featuring an ultra-low on-resistance of 0.064 Ohms at a gate-source voltage of 10V. This component is rated for a drain-source voltage (Vds) of 100V and can handle a continuous drain current (Id) of 22A at 25°C case temperature, derating to 15A at 100°C. The pulsed drain current (Idm) capability is 85A, and the power dissipation (Pd) is 85W.
This MOSFET is housed in a standard TO-220AB package, suitable for through-hole mounting. It operates within a wide temperature range from -55°C to 175°C. The datasheet also specifies electrical characteristics such as drain-to-gate voltage, gate-to-source voltage, and breakdown voltage.
Key electrical specifications include a drain-to-source breakdown voltage of 100V and a zero-gate-voltage drain current (Idss) of 1µA at 95V. The maximum temperature for soldering leads is 300°C, and for the package body is 260°C.
This device is suitable for power switching applications where low on-resistance and high current handling are required. Its robust design and specifications make it a reliable choice for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) of the IRF530N is 100V.
The continuous drain current (Id) for the IRF530N is 22A at 25°C case temperature.
The on-resistance (Rds(on)) of the IRF530N is 0.064 Ohms when the gate-source voltage (Vgs) is 10V.
The IRF530N is supplied in a TO-220AB package.
The operating and storage temperature range for the IRF530N is -55°C to 175°C.