| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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138 pcs
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138 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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102 pcs
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102 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-29 00:15:10 |
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The IRF530N is an N-Channel Power MOSFET manufactured by Vishay Dale. It is designed with an emphasis on low on-resistance, featuring a typical R DS(on) of 0.064 Ohm at a V GS of 10V. This component can handle a continuous drain current of up to 22A at 25°C case temperature and a pulsed drain current of up to 85A.
The device has a maximum drain-to-source voltage (V DSS) of 100V and a gate-to-source voltage (V GS) rating of ±20V. Its absolute maximum power dissipation is rated at 85W at 25°C, with a derating of 0.57 W/°C above that temperature. The operating and storage temperature range is from -55°C to 175°C.
Packaged in a standard TO-220AB through-hole configuration, the IRF530N is suitable for various power switching and control applications. The leads can withstand soldering temperatures up to 300°C for 10 seconds, and the package body up to 260°C for the same duration.
Key electrical specifications include a breakdown voltage of 100V and a zero-gate-voltage drain current of 1 µA at 95V. The device is also specified with a continuous drain current of 15A at 100°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The IRF530N is available in a TO-220-3 through-hole package.
The operating junction and storage temperature range is -55°C to 175°C.
The continuous drain current is 22 A at 25°C (V_GS=10V) and 15 A at 100°C.
The typical on-resistance at V_GS=10V is 0.064 Ohm (64 mOhm).
The maximum power dissipation is 85 W at 25°C case temperature.
The gate-source voltage rating is ±20 V.