| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,147 pcs
|
3147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
392 pcs
|
392 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Technology |
The Infineon IRF5305PBF is a P-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vds) of 55V and a continuous drain current (Id) of 31A at 25°C.
This MOSFET utilizes Metal Oxide Semiconductor technology and is part of the HEXFET series. Key electrical characteristics include a maximum power dissipation of 110W and a maximum gate charge of 63 nC at 10V. The gate-source voltage maximum is ±20V, and the input capacitance (Ciss) is 1200 pF at 25V.
Packaged in a standard TO-220AB through-hole configuration, the IRF5305PBF operates within a temperature range of -55°C to 175°C. Its RdsOn resistance is a maximum of 60mOhm at 16A and 10V, with a gate threshold voltage (Vgs(th)) maximum of 4V at 250µA.
This component is suitable for designs requiring a P-Channel MOSFET with specific voltage and current handling capabilities. Its robust operating temperature range makes it adaptable to various environmental conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 55V.
The continuous drain current (Id) is 31A at 25°C.
The IRF5305PBF is supplied in a TO-220AB package.
The operating temperature range is -55°C to 175°C.
The RoHS status is RoHS3 Compliant.