| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
38,820 pcs
|
38820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF5305PBF is a P-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source breakdown voltage of -55V and a continuous drain current of -31A at 25°C case temperature. The device offers a maximum on-resistance of 60mΩ at 10V gate drive, ensuring efficient power switching.
This MOSFET is designed for fast switching applications and is fully avalanche rated with a single pulse avalanche energy of 280mJ. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 110W. The gate threshold voltage ranges from -2.0V to -4.0V, and the total gate charge is 63nC at 10V.
The IRF5305PBF is housed in a standard TO-220AB through-hole package, which provides low thermal resistance (junction-to-case 1.4°C/W) and is suitable for power dissipation levels up to approximately 50W in typical applications. The device is lead-free and RoHS compliant.
Typical applications include power management circuits, DC-DC converters, motor control, and load switching in automotive and industrial systems. The P-Channel configuration simplifies drive circuitry in high-side switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.53 | $2.53 |
| 10+ | $1.63 | $1.63 |
| 50+ | $1.24 | $1.24 |
| 100+ | $1.11 | $1.11 |
| 500+ | $0.89 | $0.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -55V (minimum).
It is available in a TO-220-3 through-hole package (TO-220AB).
The junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant and lead-free.
Maximum on-resistance is 60mΩ at 16A drain current and 10V gate drive.
Maximum continuous drain current is -31A at 25°C case temperature.
Gate threshold voltage ranges from -2.0V to -4.0V at 250µA drain current.