| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF5305L is a P-Channel power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 55V and a continuous drain current of 31A at case temperature. The device offers a low drain-source on-resistance of 60mΩ at 16A and 10V gate drive, making it suitable for efficient power switching. The gate threshold voltage is a maximum of 4V at 250µA drain current. This MOSFET is housed in a TO-262 through-hole package, which provides robust thermal performance with a maximum power dissipation of 110W at case temperature and operates over a junction temperature range of -55°C to 175°C. The typical applications include power management, DC-DC converters, load switching, and battery protection circuits.
| Qty | Low | High |
|---|---|---|
| 50+ | $1.91 | $1.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 55V.
The maximum drain current is 31A at case temperature (Tc).
The drain-source on-resistance is a maximum of 60mΩ at Id=16A and Vgs=10V.
The operating junction temperature range is -55°C to 175°C.
It uses a TO-262 through-hole package (TO-262-3 Long Leads, I²Pak, TO-262AA).
The part is listed as RoHS3 Compliant, but this is unverified low-confidence data.
The maximum gate threshold voltage is 4V at Id=250µA.