| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF530 is an N-channel MOSFET suitable for high-speed and high-power applications. It is designed to sustain 14A of continuous current with a 100V drain-to-source voltage rating. In pulse mode, it can handle loads up to 56A. This MOSFET is compatible with IC and microcontroller outputs due to its low gate driving current requirement.
Key electrical specifications include a maximum drain-to-source voltage of 100V, a maximum continuous drain current of 14A, and a pulse drain current of 56A. It has a maximum power dissipation of 88W and a maximum gate-to-source voltage of ±20V. The on-state resistance is 0.16Ω, and the total gate charge is 26nC. Switching characteristics include a turn-on delay time of 10ns, rise time of 34ns, turn-off delay time of 23ns, and fall time of 24ns.
The IRF530 operates within a junction and storage temperature range of -55°C to +175°C. It comes in a TO-220AB package, making it suitable for through-hole mounting. Its ruggedized design and low cost make it popular in industrial applications. The MOSFET also features low on-state resistance and fast switching capabilities.
Applications for the IRF530 include battery management systems, motor drives, solar power supplies, UPS, DC-DC and DC-AC converters, regulators, audio amplifiers, and solenoid/relay drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage for the IRF530 is 100V.
The IRF530 can sustain a maximum continuous drain current of 14A.
The IRF530 MOSFET comes in a TO-220AB package.
The IRF530 can operate in a temperature range of -55°C to +175°C.
The on-state resistance of the IRF530 is 0.16Ω.