| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF530 is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for fast switching and rugged performance. It features a drain-source breakdown voltage of 100V and a continuous drain current of 14A at 25°C case temperature, with pulsed current capability up to 56A. The on-resistance is typically 160mΩ at 8.4A drain current and 10V gate-source voltage.
This device offers a total gate charge of 26nC at 10V, with gate-source charge of 5.5nC and gate-drain charge of 11nC, enabling efficient drive requirements. Input capacitance is 670pF at 25V drain-source. The MOSFET is avalanche rated, with single-pulse avalanche energy of 69mJ and repetitive avalanche current of 14A.
The IRF530 is housed in the industry-standard TO-220AB through-hole package, suitable for power dissipation up to 88W at 25°C case temperature and operates over a junction temperature range of -55°C to +175°C. It is commonly used in power supplies, motor control circuits, and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 15+ | $1.00 | $1.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 100V minimum.
The continuous drain current is 14A at Tc=25°C and 10A at Tc=100°C. The pulsed drain current is 56A.
The operating junction temperature range is -55°C to 175°C.
The IRF530 is offered in a TO-220AB through-hole package.
The maximum on-resistance is 160mΩ at Vgs=10V and Id=8.4A.
RoHS compliance is unverified for the base IRF530 part. Lead-free variants are available (IRF530PbF).