IRF5210STRLPBF IRF5210STRLPBF is a 100V, 38A P-Channel power MOSFET in a D2PAK surface mount package, featuring ultra-low on-resistance and fast switching.
Mfr Part #:

IRF5210STRLPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF5210STRLPBF is a 100V, 38A P-Channel power MOSFET in a D2PAK surface mount package, featuring ultra-low on-resistance and fast switching.
✓ Total Stock: 151 pcs
$ Price Range: $0.92 - $3.04

IRF5210STRLPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
79 pcs
79 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
72 pcs
72 pcs On Request 1 On Request On Request 2112 On Request On Request

IRF5210STRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF5210STRLPBF Description

Short technical summary and product information.

The IRF5210STRLPBF is a 100V, 38A P-Channel enhancement-mode MOSFET manufactured by Infineon Technologies. It uses advanced process technology to achieve an ultra-low on-resistance of 60mOhm maximum at 10V gate drive, enabling high-efficiency power conversion. The device is designed for a junction operating temperature range of -55°C to 150°C and supports fast switching.

 

Key electrical characteristics include a total gate charge of 230nC and input capacitance of 2780pF, making it suitable for medium-speed switching applications. The MOSFET is rated for repetitive avalanche energy up to 120mJ single pulse, providing robust performance in rugged power environments.

 

The device is offered in a surface-mount D2PAK (TO-263-3) package, which provides excellent thermal performance with a junction-to-case thermal resistance of 0.75°C/W. It is lead-free and RoHS compliant (unverified), suitable for use in power management and load switching circuits.

IRF5210STRLPBF Quick Information

Product Type: Single P-Channel MOSFET
Canonical Name: IRF5210STRLPBF P-Channel MOSFET
Subcategory: P-Channel MOSFET

IRF5210STRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF5210STRLPBF Estimated Pricing

Qty Low High
1+ $3.04 $3.04
10+ $1.97 $1.97
50+ $1.51 $1.51
100+ $1.36 $1.36
800+ $1.04 $1.04
2,400+ $0.92 $0.92

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF5210STRLPBF Features

  • 100V drain-source breakdown voltage rating.
  • 38A continuous drain current at 25°C.
  • 60mOhm maximum on-resistance at 10V gate.
  • 150°C maximum junction operating temperature.
  • Fast switching P-Channel MOSFET.

IRF5210STRLPBF Applications

  • Used in power supply load switching.
  • Suitable for DC-DC converter circuits.
  • Battery disconnect and polarity protection.
  • Motor or solenoid drive applications.

IRF5210STRLPBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for IRF5210STRLPBF?

100V.

What is the continuous drain current rating at 25°C?

38A at Tc=25°C.

What is the package type?

D2PAK (TO-263-3).

What is the operating temperature range?

-55°C to 150°C.

Is the IRF5210STRLPBF RoHS compliant?

Listed as RoHS3 compliant, but unverified. Datasheet indicates lead-free.

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