| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,745 pcs
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8745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
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The IRF5210SPBF is a P-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power conversion. It features a drain-to-source breakdown voltage of 100V (minimum) and a continuous drain current of 38A at 25°C case temperature. The on-resistance is typically 60mOhm at VGS=10V, enabling low conduction losses.
The device is housed in a surface-mount D2PAK package (TO-263-3), providing excellent thermal performance with a junction-to-case thermal resistance of 0.75°C/W maximum. The operating junction temperature range spans -55°C to 150°C, supporting demanding environments. The MOSFET supports fast switching and repetitive avalanche energy up to 120mJ single pulse.
Key electrical characteristics include a gate threshold voltage range of -2.0V to -4.0V, input capacitance of 2780pF, and total gate charge of 230nC. The device is lead-free and RoHS3 compliant (unverified).
The minimum drain-to-source breakdown voltage is 100V at VGS=0V, ID=-250µA.
It is offered in a surface-mount D2PAK package (TO-263-3).
The junction operating temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified.
38A at case temperature 25°C; derated to 24A at 100°C.
The gate threshold voltage ranges from -2.0V to -4.0V at VDS=VGS, ID=-250µA.