| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
122,770 pcs
|
122770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
36,205 pcs
|
36205 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
964 pcs
|
964 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF5210PBF is a P-Channel enhancement mode power MOSFET manufactured by Infineon Technologies. It is designed for high efficiency power management applications. The device features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 40A at case temperature Tc. The maximum drain-source on-resistance (Rds(on)) is 60 milliohms at Id=24A and Vgs=10V, ensuring low conduction losses.
The MOSFET has a gate charge (Qg) of 180 nC at Vgs=10V, and an input capacitance (Ciss) of 2700 pF at Vds=25V, which are important for switching performance. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=250µA. The device can handle a maximum power dissipation of 200W at Tc. It operates over a junction temperature range of -55°C to 175°C.
The IRF5210PBF is housed in a TO-220-3 package with a through-hole mounting type, making it suitable for PCB mounting. The supplier device package is TO-220AB. This package provides good thermal performance for power dissipation.
Typical applications include power management, motor control, and DC-DC converters requiring high efficiency and reliability. The device is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.01 | $4.01 |
| 10+ | $2.63 | $2.63 |
| 50+ | $2.03 | $2.03 |
| 100+ | $1.84 | $1.84 |
| 500+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The continuous drain current is 40A at Tc.
The maximum drain-source on-resistance is 60 mOhm at Id=24A, Vgs=10V.
The MOSFET is available in a TO-220-3 package (TO-220AB).
The junction temperature range is -55°C to 175°C.
The device is listed as RoHS3 compliant, but this has not been verified.
The maximum gate threshold voltage is 4V at Id=250µA.