| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF5210L is a P-Channel power MOSFET from Infineon Technologies designed for efficient power switching. It features a drain-to-source breakdown voltage of 100V (minimum -100 V at ID = -250 µA, VGS = 0V) and continuous drain current of 38A at 25°C, with pulsed current capability up to 140A. The device utilizes advanced process technology for ultra low on-resistance and fast switching performance.
Key electrical parameters include a maximum input capacitance of 2700 pF at Vds = 25 V and maximum gate charge of 180 nC at Vgs = 10 V, enabling efficient gate drive design. The device supports an operating junction temperature range of -55°C to +150°C and is capable of repetitive avalanche energy up to 17 mJ.
The IRF5210L is housed in a TO-262 package, offering through-hole mounting for robust thermal and mechanical performance. This MOSFET is suitable for a variety of power applications requiring high efficiency and reliability.
| Qty | Low | High |
|---|---|---|
| 200+ | $2.24 | $2.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100 V, with a minimum breakdown voltage of -100 V at ID = -250 µA, VGS = 0V.
The continuous drain current is 38 A at case temperature 25°C and 24 A at 100°C, with VGS at -10V.
The maximum gate charge (Qg) is 180 nC at Vgs = 10 V.
Maximum input capacitance (Ciss) is 2700 pF at Vds = 25 V.
The operating junction temperature range is from -55°C to +150°C.
Yes, the PbF suffix in the part number (IRF5210LPbF) indicates a lead-free and RoHS compliant version.