IRF5210L P-Channel power MOSFET from Infineon with 100V drain-source breakdown voltage and 40A continuous drain current in a TO262 package.
Mfr Part #:

IRF5210L

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel power MOSFET from Infineon with 100V drain-source breakdown voltage and 40A continuous drain current in a TO262 package.
✓ Total Stock: 3,600 pcs
$ Price Range: $2.24

IRF5210L Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request

IRF5210L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF5210L Description

Short technical summary and product information.

The IRF5210L is a P-Channel power MOSFET from Infineon Technologies designed for efficient power switching. It features a drain-to-source breakdown voltage of 100V (minimum -100 V at ID = -250 µA, VGS = 0V) and continuous drain current of 38A at 25°C, with pulsed current capability up to 140A. The device utilizes advanced process technology for ultra low on-resistance and fast switching performance.

 

Key electrical parameters include a maximum input capacitance of 2700 pF at Vds = 25 V and maximum gate charge of 180 nC at Vgs = 10 V, enabling efficient gate drive design. The device supports an operating junction temperature range of -55°C to +150°C and is capable of repetitive avalanche energy up to 17 mJ.

 

The IRF5210L is housed in a TO-262 package, offering through-hole mounting for robust thermal and mechanical performance. This MOSFET is suitable for a variety of power applications requiring high efficiency and reliability.

IRF5210L Quick Information

Product Type: Power MOSFET
Series: IRF5210
Canonical Name: IRF5210L P-Channel Power MOSFET
Subcategory: Single P-Channel

IRF5210L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant
Lead Free: No

IRF5210L Estimated Pricing

Qty Low High
200+ $2.24 $2.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF5210L Features

  • P-Channel MOSFET with 100V drain-source rating.
  • Continuous drain current of 38A at 25°C.
  • Fast switching speed and low on-resistance.
  • 150°C maximum junction operating temperature.
  • Lead-free and RoHS compliant package.

IRF5210L Applications

  • Power supply high-side load switching.
  • DC-DC converter and inverter circuits.
  • Motor control and automotive power systems.
  • Battery management and protection circuits.

IRF5210L FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IRF5210L?

The drain-to-source voltage (Vdss) is 100 V, with a minimum breakdown voltage of -100 V at ID = -250 µA, VGS = 0V.

What is the continuous drain current capability?

The continuous drain current is 38 A at case temperature 25°C and 24 A at 100°C, with VGS at -10V.

What is the gate charge of this MOSFET?

The maximum gate charge (Qg) is 180 nC at Vgs = 10 V.

What is the input capacitance of the IRF5210L?

Maximum input capacitance (Ciss) is 2700 pF at Vds = 25 V.

What is the operating temperature range?

The operating junction temperature range is from -55°C to +150°C.

Is the IRF5210L RoHS compliant?

Yes, the PbF suffix in the part number (IRF5210LPbF) indicates a lead-free and RoHS compliant version.

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