BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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1,804 pcs
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1804 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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855 pcs
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855 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The IRF5210 from Vishay Dale is a P-Channel Power MOSFET featuring advanced process technology for exceptionally low on-resistance per silicon area. This device is rated for 100V and a continuous drain current of 40A at 25°C, with a maximum power dissipation of 200W. Its ruggedized device architecture and quick switching speed make it suitable for a broad range of applications.
The MOSFET is housed in a TO-220 package, recommended for commercial-industrial applications, and is designed for through-hole mounting. It operates across a wide temperature range of -55°C to 175°C.
Key features include ultra-low on-resistance, dynamic DV/DT rating, and it is fully avalanche rated. The IRF5210 is an efficient and dependable component for switching applications.
The continuous drain current (Id) for the IRF5210 is 40A at 25°C.
The breakdown voltage of the IRF5210 is 100V.
The IRF5210 can operate at temperatures from -55°C to 175°C.
The IRF5210 is supplied in a TO-220-3 package.
The IRF5210 is designed for through-hole mounting.
The IRF5210 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF5210 is 1 Unlimited.