| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF5210 is a P-Channel Power MOSFET manufactured by International Rectifier, known for its HEXFET technology. This component is designed for switching applications and offers an ultra-low on-resistance per silicon area, combined with quick switching speeds and a rugged device architecture.
Key electrical specifications include a continuous drain current of 40A at 25°C, a maximum power dissipation of 200W, and a gate drive voltage of 10V. The operating temperature range is from -55°C to 175°C. The MOSFET has a drain-source voltage rating of 100V.
Packaged in a TO-220-3 through-hole configuration with tin-plated contacts, the IRF5210 is suitable for commercial-industrial applications. Its advanced processing techniques and reliable performance make it an efficient choice for various design needs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
40A at 25°C.
200W.
-55°C to 175°C.
TO-220-3 through-hole.
10V.
79ns.