| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF520S is an N-Channel power MOSFET from Vishay Siliconix, designed for high efficiency switching applications. It features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 9.2A at 25°C case temperature, with a pulsed current capability of 37A. The device offers a low maximum on-resistance of 270mΩ at a gate drive of 10V and 5.5A drain current, ensuring minimal conduction losses.
This MOSFET incorporates third-generation technology providing fast switching, ruggedized design, and ease of paralleling. Key electrical characteristics include a maximum gate charge of 16nC at 10V, input capacitance of 360pF at 25V, and a gate threshold voltage of 4V at 250µA. The device is rated for single pulse avalanche energy up to 200mJ and peak diode recovery dV/dt of 5.5V/ns, enhancing reliability in inductive load switching.
The IRF520S is housed in a surface mount D2PAK (TO-263) package, which offers high power dissipation capability up to 60W at case temperature 25°C and 3.7W at ambient temperature on a PCB. The operating junction temperature range is -55°C to 175°C. The package is suitable for automated assembly and is available in tape and reel options. The datasheet indicates that some variants are RoHS-compliant, but the specific status for this part number should be verified.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.21 | $1.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 100V.
The maximum continuous drain current is 9.2A at Tc=25°C and 6.5A at Tc=100°C.
The maximum drain-source on-resistance is 270mΩ at Id=5.5A and Vgs=10V.
The IRF520S is available in a surface mount D2PAK (TO-263) package, specifically TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
The operating junction temperature range is -55°C to 175°C.
The datasheet indicates that some parts are RoHS-compliant, but the specific status for this part number is unverified and has low confidence.
The maximum gate charge is 16nC at Vgs=10V.