| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF520N is an N-Channel enhancement mode power MOSFET from Infineon Technologies, part of the fifth-generation HEXFET family. It is designed for high efficiency and fast switching in a variety of power conversion and management applications.
Key electrical specifications include a drain-to-source voltage (Vdss) of 100V, a continuous drain current of 9.7A at 25°C case temperature, and a maximum on-resistance of 200mΩ at Vgs=10V. The device is fully avalanche rated with a single pulse avalanche energy of 91mJ and features a maximum junction temperature of 175°C.
The IRF520N is offered in the industry-standard TO-220AB package, which is a through-hole mounting type. This package provides low thermal resistance and is well-suited for power dissipation levels up to 48W. The device is lead-free (PbF) compliant.
| Qty | Low | High |
|---|---|---|
| 400+ | $0.98 | $0.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The continuous drain current is 9.7A at a case temperature of 25°C and 6.8A at 100°C.
The maximum drain-to-source on-resistance (Rds(on)) is 200mΩ at a gate-source voltage of 10V and a drain current of 5.7A.
The IRF520N is supplied in a TO-220AB (TO-220-3) through-hole package.
The operating junction temperature range is -55°C to 175°C.
The IRF520N is indicated as RoHS3 compliant and is lead-free (PbF).
The maximum total gate charge (Qg) is 25 nC at a gate-source voltage of 10V.