| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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330 pcs
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330 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Siliconix IRF520 is a third-generation N-Channel Power MOSFET designed for commercial and industrial applications. It offers a balance of fast switching speeds, rugged device design, and low on-resistance.
Key electrical specifications include a drain-source voltage of 100V and a continuous drain current of 9.2A at 25°C case temperature, decreasing to 6.5A at 100°C. The typical on-resistance is 0.27 Ohms when the gate-source voltage is 10V. The device has a gate threshold voltage of 4V (max) and features fast switching characteristics with rise and fall times of 30nS and 20nS, respectively.
This MOSFET is housed in the universally preferred TO-220AB package, known for its low thermal resistance and cost-effectiveness, making it suitable for power dissipation levels up to approximately 50W. The operating junction and storage temperature range is from -55°C to +175°C.
The IRF520 is suitable for applications such as switching high power devices, motor speed control, LED dimming, and DC-DC converters. Its simple drive requirements and ease of paralleling further enhance its design flexibility.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRF520 is 100V.
The continuous drain current of the IRF520 is 9.2A at 25°C case temperature.
The typical on-resistance of the IRF520 is 0.27 Ohms when the gate-source voltage is 10V.
The operating junction and storage temperature range for the IRF520 is -55°C to +175°C.
The IRF520 is supplied in the TO-220AB package.
The gate threshold voltage of the IRF520 is a maximum of 4V.