| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
103 pcs
|
103 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF520 is an N-Channel enhancement-mode MOSFET from Harris Semiconductor. It is designed for power switching applications and offers a drain-to-source voltage rating of 100V and a continuous drain current of 9.2A at case temperature Tc.
The device features a maximum on-resistance of 270 mOhm at 5.6A and 10V gate drive, ensuring efficient conduction. The gate charge is 15 nC at 10V and input capacitance is 350 pF at 25V, enabling moderate switching speeds.
The IRF520 is housed in a TO-220-3 through-hole package (also known as TO-220AB) for easy mounting on printed circuit boards or heatsinks. It supports an operating junction temperature range of -55°C to 175°C and a maximum power dissipation of 60W at Tc.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.36 | $3.36 |
| 119+ | $1.16 | $1.16 |
| 411+ | $1.07 | $1.07 |
| 550+ | $1.05 | $1.05 |
| 2,000+ | $0.45 | $0.45 |
| 3,779+ | $0.92 | $0.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 175°C (junction).
TO-220-3 (through-hole).
100V.
9.2A at Tc.
270 mOhm at 5.6A, 10V.
15 nC at 10V.
350 pF at 25V.