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IRF510S N-Channel MOSFET with 100V drain-source voltage and 5.6A continuous drain current. Surface mount in D2PAK (TO-263) package.
Mfr Part #:

IRF510S

Available from 2 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET with 100V drain-source voltage and 5.6A continuous drain current. Surface mount in D2PAK (TO-263) package.
✓ Total Stock: 3,840 pcs
$ Price Range: $1.33

IRF510S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,500 pcs
On Request
3500 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
340 pcs
On Request
340 pcs On Request 1 On Request On Request 18+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF510S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF510S Description

Short technical summary and product information.

The IRF510S is an N-Channel enhancement-mode MOSFET from Vishay Dale, designed for switching and amplification applications. It features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 5.6A at case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds(on)) of 540mOhm at Vgs=10V and Id=3.4A, a maximum gate charge (Qg) of 8.3nC at Vgs=10V, and input capacitance (Ciss) of 180pF at Vds=25V. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=250µA. Maximum power dissipation is 3.7W at ambient temperature and 43W at case temperature.

 

The device is surface mount packaged in a TO-263-3 (D2Pak) with 2 leads and tab, also known as D2PAK (TO-263). It operates over a junction temperature range of -55°C to 175°C. The MOSFET is RoHS3 compliant and REACH unaffected (unverified).

IRF510S Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IRF510S N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRF510S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IRF510S Estimated Pricing

Qty Low High
1,000+ $1.33 $1.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF510S Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 5.6A.
  • Low on-resistance of 540mOhm at 10V gate drive.
  • Surface mount D2PAK (TO-263) package.
  • Wide operating temperature range -55°C to 175°C.

IRF510S Applications

  • Suitable for switching power supply circuits.
  • Used in DC-DC converter designs.
  • Ideal for load switching applications.
  • Can be used in motor drive circuits.

IRF510S FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF510S?

The maximum drain-source voltage (Vdss) is 100V.

What package does the IRF510S come in?

The IRF510S is available in a surface mount D²PAK (TO-263) package, specifically TO-263-3.

What is the operating temperature range of the IRF510S?

The junction temperature range is -55°C to 175°C.

Is the IRF510S RoHS compliant?

The IRF510S is listed as RoHS3 compliant, but this is unverified.

What is the gate charge of the IRF510S?

The maximum gate charge (Qg) is 8.3 nC at Vgs = 10V.

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