| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,250 pcs
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4250 pcs | On Request | 1 | On Request | On Request | 19 | On Request | On Request |
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| Manufacturer Name |
The Vishay IRF510PBF is a third-generation N-Channel Power MOSFET designed to provide a balance of fast switching, ruggedness, low on-resistance, and cost-effectiveness. It features a drain-source voltage (VDS) of 100V and a typical on-resistance (RDS(on)) of 8.3 Ohms when the gate-source voltage (VGS) is 10V.
This MOSFET is housed in the universally preferred TO-220AB package, making it suitable for commercial-industrial applications with power dissipation levels up to approximately 50W. The low thermal resistance and cost-effectiveness of the TO-220AB package contribute to its wide acceptance in the industry. The device offers typical gate charge (Qg) of 3.8 nC, gate-source charge (Qgs) of 2.3 nC, and gate-drain charge (Qgd) of 0.54 nC.
Vishay's third-generation power MOSFETs are engineered to offer designers the best combination of performance and value for various power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The typical on-resistance is 8.3 Ohms.
The package type is TO-220AB.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.