| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,170 pcs
|
1170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The IRF510PBF is an N-Channel Power MOSFET from Vishay Dale, part of the third generation power MOSFET family. It is designed for high-performance applications requiring fast switching, low on-resistance, and ruggedness.
Key specifications include a drain-source voltage of 100V, continuous drain current of 5.6A at 25°C (4.0A at 100°C), and a maximum on-resistance of 540 mOhm at 3.4A and 10V gate drive. The device features a gate charge of 8.3 nC, making it efficient for high-frequency switching. It also has an operating junction temperature range from -55°C to 175°C, and a maximum power dissipation of 43W at 25°C case temperature.
The TO-220AB package is a through-hole mounting type, suitable for power dissipation levels up to approximately 50W. The low thermal resistance (junction-to-case 3.5°C/W) helps in thermal management. The MOSFET is rated for repetitive avalanche energy (4.3 mJ) and has a peak diode recovery dV/dt of 5.5 V/ns, indicating robust performance in inductive switching circuits. The device is RoHS compliant and REACH unaffected, with MSL level 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.84 | $2.84 |
| 10+ | $1.83 | $1.83 |
| 50+ | $1.40 | $1.40 |
| 100+ | $1.26 | $1.26 |
| 500+ | $1.01 | $1.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V
TO-220-3 (TO-220AB) through-hole
-55°C to 175°C (junction)
RoHS3 Compliant
5.6 A at 25°C case temperature; 4.0 A at 100°C
Maximum 540 mΩ at 3.4 A drain current and 10 V gate-source voltage
Maximum 4 V at 250 µA drain current