| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF510 is a third-generation N-Channel power MOSFET manufactured by Vishay Siliconix. It is designed for high efficiency and fast switching in commercial and industrial applications with power dissipation levels up to 43 W.
Key electrical specifications include a drain-source breakdown voltage of 100 V, continuous drain current of 5.6 A at 25°C case temperature, and a maximum on-resistance of 540 mOhm at 10 V gate drive. The device also features a pulsed drain current rating of 20 A and a single pulse avalanche energy rating of 75 mJ.
The IRF510 is housed in the industry-standard TO-220AB package, which offers low thermal resistance (3.5 °C/W junction-to-case) and cost-effective through-hole mounting. The operating junction temperature range is -55°C to +175°C, making it suitable for demanding thermal environments.
The drain-source voltage (Vds) is 100 V.
The continuous drain current is 5.6 A at 25°C case temperature and 4.0 A at 100°C case temperature.
The maximum on-resistance is 540 mOhm at VGS=10V and ID=3.4A.
The IRF510 is available in a TO-220-3 through-hole package (supplier device package TO-220AB).
The operating junction temperature range is -55°C to +175°C.
The datasheet indicates parts may be RoHS-compliant, but this has not been verified. Check the manufacturer's RoHS statement for your specific part number.
The maximum total gate charge (Qg) is 8.3 nC at VGS=10V.