IRF510 IRF510 is a 100V, 5.6A N-Channel power MOSFET from Vishay Dale in a TO-220AB through-hole package. It features a low on-resistance of 540 mOhm and fast switching performance.
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IRF510

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRF510 is a 100V, 5.6A N-Channel power MOSFET from Vishay Dale in a TO-220AB through-hole package. It features a low on-resistance of 540 mOhm and fast switching performance.
✓ Total Stock: 50 pcs

IRF510 Available from 1 distributor

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IRF510 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF510 Description

Short technical summary and product information.

The IRF510 is a third-generation N-Channel power MOSFET manufactured by Vishay Siliconix. It is designed for high efficiency and fast switching in commercial and industrial applications with power dissipation levels up to 43 W.

 

Key electrical specifications include a drain-source breakdown voltage of 100 V, continuous drain current of 5.6 A at 25°C case temperature, and a maximum on-resistance of 540 mOhm at 10 V gate drive. The device also features a pulsed drain current rating of 20 A and a single pulse avalanche energy rating of 75 mJ.

 

The IRF510 is housed in the industry-standard TO-220AB package, which offers low thermal resistance (3.5 °C/W junction-to-case) and cost-effective through-hole mounting. The operating junction temperature range is -55°C to +175°C, making it suitable for demanding thermal environments.

IRF510 Quick Information

Product Type: Power MOSFET
Canonical Name: IRF510 N-Channel Power MOSFET, 100V, 5.6A, TO-220AB
Subcategory: N-Channel Power MOSFET

IRF510 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF510 Features

  • 100V drain-source breakdown voltage.
  • 5.6A continuous drain current at 25°C.
  • 540 mOhm maximum on-resistance at 10V.
  • 175°C maximum operating junction temperature.
  • TO-220AB through-hole package.

IRF510 Applications

  • Suitable for medium-voltage power switching.
  • Used in DC-DC converter circuits.
  • Ideal for motor control applications.
  • Applicable in power supply designs.

IRF510 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF510?

The drain-source voltage (Vds) is 100 V.

What is the continuous drain current of the IRF510?

The continuous drain current is 5.6 A at 25°C case temperature and 4.0 A at 100°C case temperature.

What is the on-resistance of the IRF510?

The maximum on-resistance is 540 mOhm at VGS=10V and ID=3.4A.

What package does the IRF510 come in?

The IRF510 is available in a TO-220-3 through-hole package (supplier device package TO-220AB).

What is the operating temperature range of the IRF510?

The operating junction temperature range is -55°C to +175°C.

Is the IRF510 RoHS compliant?

The datasheet indicates parts may be RoHS-compliant, but this has not been verified. Check the manufacturer's RoHS statement for your specific part number.

What is the gate charge of the IRF510?

The maximum total gate charge (Qg) is 8.3 nC at VGS=10V.

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