| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
97 pcs
|
97 pcs | On Request | 1 | On Request | On Request | 06+33 | On Request | On Request |
| Category | |
| Manufacturer Name |
The IRF4905SPBF from Vishay Siliconix is a P-channel HEXFET Power MOSFET. It is engineered with advanced process technology for ultra-low on-resistance and fast switching speeds. This MOSFET features a continuous drain current of -42A and a power dissipation of 170W at 25°C.
Key electrical characteristics include a drain-to-source breakdown voltage of -55V and a static drain-to-source on-resistance of 20mΩ at a gate-to-source voltage of -10V. The operating junction temperature range is from -55°C to +150°C, making it suitable for demanding applications.
This component is supplied in a TO-263-3, D²Pak surface mount package. Its design prioritizes efficiency and reliability, making it a versatile choice for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is -55V minimum at VGS = 0V and ID = -250µA.
The maximum continuous drain current is -42A at TC = 25°C when package-limited, and -70A when silicon-limited.
The static drain-to-source on-resistance is 20mΩ maximum at ID = -42A and VGS = -10V.
The gate threshold voltage is -3V nominal, with a range of -2V to -4V.
The maximum power dissipation is 170W at TC = 25°C.
The operating junction and storage temperature range is -55°C to +150°C.
It is available in a TO-263-3 (D2Pak) surface-mount package with two leads and a tab.