| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
61 pcs
|
61 pcs | On Request | 1 | On Request | On Request | 2141/22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Td (on |
The Infineon IRF4905SPBF is a P-channel HEXFET Power MOSFET characterized by its advanced process technology, ultra-low on-resistance, and high operating temperature capability.
Key electrical specifications include a drain-to-source breakdown voltage (VDS) of -55V, a static drain-to-source on-resistance (RDS(on)) of 20mΩ, and a continuous drain current (ID) of -70A at 25°C case temperature. The device operates reliably up to a junction temperature of 150°C.
This MOSFET is available in D2Pak and TO-262 package types, suitable for various mounting configurations. Its features, such as fast switching speed and improved repetitive avalanche rating, make it suitable for a wide range of applications requiring efficient and reliable power management.
Designed with features like ultra-low on-resistance and a 150°C operating temperature, the IRF4905SPBF is engineered for demanding applications. Its P-channel configuration and robust construction ensure performance in diverse electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55V
20mΩ
-70A
150°C
D2Pak and TO-262
RoHS3 Compliant
1 Unlimited