| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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46 pcs
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46 pcs | On Request | 1 | On Request | On Request | 1144/1531 | On Request | On Request |
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| Manufacturer Name |
The IRF4905SPBF is a P-channel HEXFET Power MOSFET manufactured by Infineon. This device is designed for efficiency and reliability, featuring an advanced process technology for ultra-low on-resistance and fast switching speeds.
Key electrical specifications include a drain-source breakdown voltage (VDS) of -55V and a static drain-to-source on-resistance (RDS(on)) of 20mΩ at a typical gate-source voltage. The continuous drain current (ID) is rated at -42A (package limited) and -70A (silicon limited) at 25°C.
With an operating junction temperature range of -55°C to +150°C, the IRF4905SPBF is suitable for a variety of applications. It comes in a D2Pak package, designed for surface mounting.
This MOSFET is built with features such as 150°C operating temperature, fast switching, and repetitive avalanche rating up to Tjmax, making it a reliable choice for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55 V (minimum).
D2Pak surface-mount package.
-55°C to +150°C.
20 mΩ maximum static drain-to-source on-resistance.
-2.0 V to -4.0 V.
-70 A at TC=25°C (silicon limited), -44 A at TC=100°C, and -42 A at TC=25°C (package limited).
170 W at TC=25°C.