| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The IRF4905SPBF is a P-Channel Power MOSFET manufactured by Infineon Technologies, part of the HEXFET family. It offers a drain-to-source breakdown voltage of -55V and a continuous drain current of -42A (package limited) at 25°C. The device features an ultra-low static drain-to-source on-resistance of 20 mΩ (maximum) at VGS=-10V and ID=-42A, enabling high efficiency in power conversion applications.
This MOSFET supports fast switching with typical turn-on delay of 20 ns and rise time of 99 ns. It is designed for 150°C maximum junction temperature and includes repetitive avalanche capability. The device is lead-free and RoHS compliant.
The IRF4905SPBF is offered in a D2PAK (TO-263) surface-mount package, suitable for automated assembly. It is commonly used in power management circuits, DC-DC converters, and motor control applications requiring high efficiency and reliability.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.00 | $1.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is -55V (minimum) at VGS=0V and ID=-250µA.
The maximum continuous drain current is -42A at TC=25°C (package limited) and -70A (silicon limited).
The static drain-to-source on-resistance is 20 mΩ maximum at VGS=-10V and ID=-42A.
The IRF4905SPBF is available in a D2PAK (TO-263) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The IRF4905SPBF is listed as RoHS compliant (RoHS3) and is lead-free, though the RoHS status is unverified.