| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,580 pcs
|
2580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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The IRF4905S from Infineon Technologies is a P-channel HEXFET Power MOSFET designed for efficiency and reliability. It features advanced process technology, ultra-low on-resistance, and a high operating temperature capability of 150°C.
Key electrical specifications include a drain-source breakdown voltage (V(BR)DSS) of -55V and a static drain-to-source on-resistance (RDS(on)) of 20mΩ at typical conditions. The continuous drain current (ID) is rated at -42A at TC=100°C and -70A at TC=25°C (silicon limited). It also offers fast switching speeds and repetitive avalanche rating.
This MOSFET is available in two package types: D2Pak for surface mounting and TO-262. The operating junction temperature range is from -55°C to +150°C, with a junction-to-case thermal resistance of 0.75°C/W.
The IRF4905S is suitable for a wide variety of applications requiring efficient power switching and control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -55V.
The static drain-to-source on-resistance is 20mΩ.
The continuous drain current is -42A at TC=100°C and -70A at TC=25°C (silicon limited).
The IRF4905S is available in D2Pak and TO-262 packages.
The operating junction and storage temperature range is -55°C to +150°C.
The RoHS status is RoHS3 Compliant.