Mfr Part #:

IRF4905PBF

Mfr Name: N-A

The Infineon Technologies IRF4905PBF is a P-Channel Power MOSFET designed for efficiency and reliability. It features a breakdown voltage of -55V and a low on-resistance of 0.02 Ohms.

✓ Total Stock: 1 pcs

IRF4905PBF Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Husky International Electronic ✓ Non-Authorised Inventory information	1 pcs On Request	1 pcs	On Request	1	On Request	On Request	N/A	On Request	On Request

IRF4905PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	N-A
SVHC Present	Not Present
Storage Temperature	-55°C ~ 175°C
Tape & Reel	False

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IRF4905PBF Description

Short technical summary and product information.

The Infineon Technologies IRF4905PBF is a Fifth Generation HEXFET Power MOSFET utilizing advanced processing techniques for extremely low on-resistance per silicon area. This P-Channel MOSFET offers a breakdown voltage of -55V and a maximum on-resistance of 0.02 Ohms at a test condition of VGS = -10V and ID = -38A. It supports a continuous drain current of -74A at 25°C and -52A at 100°C, with a pulsed drain current rating of -260A.

Designed for high efficiency and reliability, the IRF4905PBF operates at temperatures ranging from -55°C to +175°C, making it suitable for demanding applications. The device features a maximum power dissipation of 200W at 25°C and a junction-to-case thermal resistance of 0.75°C/W. It is housed in a TO-220 package, which is widely accepted in commercial and industrial applications due to its low thermal resistance and cost-effectiveness.

Key electrical characteristics include a gate-to-source voltage range of ±20V, a gate threshold voltage between -2.0V and -4.0V, and a forward transconductance of 21S. The MOSFET also boasts a single pulse avalanche energy of 930mJ and an avalanche current of -38A. Its lead-free construction aligns with environmental standards.

IRF4905PBF Quick Information

Product Type: P-Channel Power MOSFET

Series: Fifth Generation

Canonical Name: Infineon Technologies IRF4905PBF P-Channel Power MOSFET

Subcategory: Power MOSFET

IRF4905PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead-Free

IRF4905PBF Features

P-Channel HEXFET Power MOSFET
Ultra low on-resistance: 0.02 Ohms max.
High continuous drain current: -74A at 25°C
Wide operating temperature: -55°C to +175°C
TO-220 package for industrial applications

IRF4905PBF Applications

Suitable for power switching circuits
Ideal for high-efficiency power supplies
Used in motor control applications
Applicable in battery management systems
Designed for general purpose power applications

IRF4905PBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-to-source breakdown voltage of the IRF4905PBF?

-55V minimum at VGS = 0V, ID = -250µA.

What is the maximum continuous drain current?

-74A at TC = 25°C and -52A at TC = 100°C.

What is the maximum power dissipation?

200W at case temperature 25°C.

What is the gate threshold voltage range?

-2.0V to -4.0V at VDS = VGS, ID = -250µA.

What package is the IRF4905PBF available in?

TO-220 package.

What is the operating temperature range?

-55°C to +175°C junction and storage temperature.

What is the typical total gate charge?

180nC maximum at ID = -38A.