| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF4905PBF is a P-Channel power MOSFET from Infineon's HEXFET series. It features a drain-source breakdown voltage of -55V and continuous drain current of -74A at 25°C case temperature. The device offers ultra-low on-resistance of 20mΩ (max) at VGS = -10V, enabling high efficiency in power conversion applications.
With a total gate charge of 180nC and typical turn-on delay of 18ns, the IRF4905PBF provides fast switching performance suitable for high-frequency circuits. It is fully avalanche rated with a single pulse avalanche energy of 930mJ, ensuring robustness in inductive load switching.
The MOSFET is housed in a TO-220-3 (TO-220AB) through-hole package, offering low thermal resistance (junction-to-case 0.75°C/W) and easy heatsink mounting. Operating junction temperature range is -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.35 | $3.35 |
| 10+ | $2.18 | $2.18 |
| 50+ | $1.67 | $1.67 |
| 100+ | $1.50 | $1.50 |
| 500+ | $1.22 | $1.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55V (minimum).
TO-220-3 (TO-220AB) through-hole package.
-55°C to 175°C.
Yes, it is listed as RoHS3 compliant and lead-free, but this is unverified.
-74A.
20mΩ maximum at VGS = -10V, ID = -38A.
-2V minimum, -4V maximum.