| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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The IRF442 is a high-voltage N-Channel power MOSFET manufactured by Harris Semiconductor. It is designed for switching applications requiring high voltage and moderate current handling. The device features a drain-source voltage (Vdss) of 500V and a continuous drain current rating of 7A at Tc=25°C. The maximum on-resistance (Rds(on)) is 1.1 Ohm at a gate drive of 10V and drain current of 4.4A, ensuring efficient conduction in the on-state.
Gate charge characteristics include a maximum gate charge (Qg) of 63 nC at Vgs=10V, and input capacitance (Ciss) of 1225 pF at Vds=25V. The maximum gate threshold voltage is 4V at Id=250µA. With a maximum power dissipation of 125W at Tc=25°C, the device is suitable for high-power circuits. The operating temperature range spans from -55°C to 150°C, allowing use in harsh environments.
Packaged in a TO-3 (TO-204AA) through-hole metal can, the IRF442 is built for robust thermal performance and mechanical stability. The MOSFET technology is metal-oxide semiconductor, providing reliable switching behavior. This part is commonly used in power supply units, motor controllers, inverters, and other high-voltage switching applications.
500V
7A at Tc=25°C
-55°C to 150°C
TO-3 (TO-204AA) through-hole package
RoHS3 compliant (unverified)
63 nC at Vgs=10V
125W at Tc=25°C