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492 pcs
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492 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF431 is an N-Channel MOSFET Transistor from Harris Semiconductor, housed in a TO-3 package. This component is specified with a maximum Drain-Source Voltage of 450V and a maximum Power Dissipation of 75W. The typical Drain-Source Resistance is 1.5Ω.
Designed for robust performance, the IRF431 operates at a maximum temperature of 150°C. Its TO-3 packaging is suitable for through-hole mounting and applications requiring efficient heat dissipation. This MOSFET is a component within the broader category of discrete semiconductor products, specifically single FETs and MOSFETs.
This part is often found in power switching and amplification circuits where its voltage and power handling capabilities are beneficial. The TO-3 package is a traditional metal can package known for its durability and thermal performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the IRF431 is 450V.
The IRF431 MOSFET has a maximum power dissipation of 75W.
The typical Drain-Source Resistance of the IRF431 is 1.5Ω.
The maximum operating temperature for the IRF431 is 150°C.
The IRF431 MOSFET is supplied in a TO-3 package.