| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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22,770 pcs
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22770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 21+11+ | On Request | On Request |
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The IRF4104PBF is a HEXFET Power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. It utilizes advanced process technology to achieve ultra-low on-resistance of 5.5mΩ (max) at 10V gate drive, enabling high current handling with minimal conduction losses.
The device is rated for a drain-source voltage of 40V and can deliver a continuous drain current of 75A (package limited at 25°C) or 120A (silicon limited). It supports pulsed currents up to 470A and features fast switching characterized by typical turn-on delay of 16ns. The MOSFET can operate over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 140W at 25°C case temperature.
Designed for robustness, the IRF4104PBF includes repetitive avalanche capability up to 120mJ (thermally limited) and has a low thermal resistance of 1.05°C/W junction-to-case. It comes in a standard TO-220AB through-hole package, suitable for easy mounting on heatsinks.
The drain-source voltage rating is 40V.
The continuous drain current is 75A at 25°C (package limited) and 120A (silicon limited).
The maximum on-resistance is 5.5mΩ at 75A with 10V gate drive.
The gate threshold voltage ranges from 2.0V minimum to 4.0V maximum at 250µA drain current.
The operating junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant (unverified).
It is available in a TO-220-3 through-hole package (TO-220AB).