| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,970 pcs
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1970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF40B207 from Infineon Technologies is a StrongIRFET N-Channel power MOSFET designed for high-efficiency power conversion. It is rated for a maximum drain-to-source voltage of 40V and continuous drain current of 95A at 25°C case temperature (67A at 100°C). The device features a maximum on-resistance of 4.5mOhm at VGS=10V with a typical value of 3.6mOhm.
This MOSFET offers a maximum input capacitance of 2110pF and a gate charge of 68nC at 10V, enabling fast switching. Its operating junction temperature range is -55°C to 175°C, and it can dissipate up to 83W at 25°C case temperature. The device is avalanche rated with single pulse avalanche energy of 85mJ (thermally limited).
The IRF40B207 is supplied in a TO-220AB through-hole package and is RoHS compliant, halogen-free, and lead-free. It is suited for applications such as brushed and brushless DC motor drives, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectification, and DC/DC converters.
The IRF40B207 is housed in a TO-220-3 (TO-220AB) through-hole package.
The operating junction temperature range is -55°C to 175°C.
Yes, the IRF40B207 is RoHS3 compliant as verified by the datasheet.
The maximum drain-to-source voltage (Vdss) is 40V.
The continuous drain current is 95A at TC=25°C (silicon limited) and 67A at TC=100°C.
The typical on-resistance is 3.6mOhm at VGS=10V, ID=57A with a maximum of 4.5mOhm.
The IRF40B207 is suitable for brushed and brushless DC motor drives, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectification, and DC/DC converters.