IRF3808PBF N-Channel power MOSFET rated for 75V drain-source voltage and 140A continuous drain current. Housed in a TO-220AB through-hole package.
Mfr Part #:

IRF3808PBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET rated for 75V drain-source voltage and 140A continuous drain current. Housed in a TO-220AB through-hole package.
✓ Total Stock: 26,747 pcs
$ Price Range: $1.36 - $3.67

IRF3808PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
23,147 pcs
23147 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request

IRF3808PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF3808PBF Description

Short technical summary and product information.

The IRF3808PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a maximum drain-to-source voltage of 75V and a continuous drain current of 140A at 25°C case temperature. The device offers ultra-low on-resistance with a typical Rds(on) of 5.9 mΩ at Vgs=10V, enabling high efficiency in power conversion applications.

 

This MOSFET supports a junction operating temperature range of -55°C to 175°C and has a maximum power dissipation of 330W. It includes fast switching characteristics with typical rise and fall times of 140 ns and 120 ns respectively. The device is avalanche-rated with a single pulse avalanche energy of 430 mJ.

 

The IRF3808PBF is supplied in a TO-220AB through-hole package, suitable for industrial motor drives and other high-power switching applications. The datasheet confirms the part is lead-free.

IRF3808PBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRF3808PBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRF3808PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IRF3808PBF Estimated Pricing

Qty Low High
1+ $3.67 $3.67
50+ $1.84 $1.84
100+ $1.67 $1.67
500+ $1.36 $1.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF3808PBF Features

  • N-Channel MOSFET with 75V drain-source rating.
  • 140A continuous drain current at 25°C.
  • Ultra-low on-resistance of 5.9 mΩ typical.
  • 175°C maximum junction operating temperature.
  • Lead-free and RoHS3 compliant.

IRF3808PBF Applications

  • Ideal for industrial motor drive circuits.
  • Suitable for high-power switching applications.
  • Used in DC-DC converters and power supplies.

IRF3808PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRF3808PBF?

The maximum drain-to-source voltage (Vdss) is 75 V.

What is the continuous drain current rating of the IRF3808PBF?

The continuous drain current is 140 A at Tc=25°C and 97 A at Tc=100°C.

What is the operating temperature range of the IRF3808PBF?

The operating junction temperature range is -55°C to 175°C.

What package does the IRF3808PBF come in?

The IRF3808PBF is available in a TO-220-3 through-hole package (TO-220AB).

Is the IRF3808PBF RoHS compliant?

The part is listed as RoHS3 Compliant and is lead-free per the datasheet.

What is the typical on-resistance of the IRF3808PBF?

The typical static drain-to-source on-resistance is 5.9 mΩ at Id=82A and Vgs=10V.

What is the maximum power dissipation of the IRF3808PBF?

The maximum power dissipation is 330 W at Tc=25°C.

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